A highly effective edge termination design for SiC planar high power devices

被引：13

作者：

Pérez, R

Mestres, N

Blanque, S

Tournier, D

Jordà, X

Godignon, P

Nipoti, R

机构：

[1] CSIC, ICMAB, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain

[2] CSIC, ICMAB, Inst Microelect Barcelona, Bellaterra 08193, Spain

[3] CNR, Ist Lamel, IT-40129 Bologna, Italy

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

4H-SiC; pn diodes; device design; breakdown voltage; edge termination;

D O I：

10.4028/www.scientific.net/MSF.457-460.1253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Traditional junction termination extension (JTE) designs required precise control of dopant profiles in the JTE layer in order to achieve total depletion at the desired blocking voltage. To extend the HE range of impurity concentration for obtaining high breakdown values we have optimised and developed a new termination called "guards rings assisted HE structure" which has proved to show a high efficiency on breakdown capabilities. The new structure has been implemented on 1.7kV range 4H-SiC pn diodes. Reverse measurements have shown that a near ideal breakdown (approaching 95% of the ideal plane junction breakdown voltage) can be reached on diodes with the proposed termination and have confirmed the great reliability of this developed termination as compared to the classical JTE, double HE and guard rings.

引用

页码：1253 / 1256

页数：4

共 7 条

[1] Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers [J].

Chatty, K ;

Khemka, V ;

Chow, TP ;

Gutmann, RJ .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1331-1334

[2]

DAHLQUIST F, 2002, THESIS KTH ROY I TEC

[3] Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices [J].

Lades, M ;

Kaindl, W ;

Kaminski, N ;

Niemann, E ;

Wachutka, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :598-604

[4] Progress in wide bandgap semiconductor SiC for power devices [J].

Matsunami, H .

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :3-9

[5] Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect [J].

Morvan, E ;

Godignon, P ;

Montserrat, J ;

Fernandez, J ;

Flores, D ;

Millan, J ;

Chante, JP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :218-222

[6] Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diode [J].

Pérez, R ;

Mestres, N ;

Jordà, X ;

Godignon, P ;

Pascual, J .

[7] Periphery protection for silicon carbide devices: State of the art and simulation [J].

Planson, D ;

Locatelli, ML ;

Ortolland, S ;

Chante, JP ;

Mitlehner, H ;

Stephani, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :210-217

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