Resistive switching in HfO2-based atomic layer deposition grown metal insulator metal structures

被引：22

作者：

Jancovic, Peter ^{[1
]}

Hudec, Boris ^{[1
]}

Dobrocka, Edmund ^{[1
]}

Derer, Jan ^{[1
]}

Fedor, Jan ^{[1
]}

Froehlich, Karol ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2014年 / 312卷

关键词：

Resistive switching; HfO2; Atomic layer deposition; Metal-insulator-metal structures; MEMORY;

D O I：

10.1016/j.apsusc.2014.05.018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We prepared Pt/HfO2/TiN metal-insulator-metal structures for resistive switching experiments. The HfO2 films were prepared by thermal, ozone and plasma assisted atomic layer deposition. The deposition techniques yielded HfO2 films that were conducive to stable and reproducible bipolar resistive switching. We observed that the forming voltage scaled with the Hf02 film thickness. The structures did not show degradation after 104 consecutive resistive switching operations in a millisecond pulsed regime. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：112 / 116

页数：5

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