Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation

被引：13

作者：

Tajima, Michio ^{[1
]}

Kiuchi, Hirotatsu ^{[1
]}

Higuchi, Fumito ^{[1
]}

Ogura, Atsushi ^{[1
]}

机构：

[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 04期

关键词：

SILICON; CARBON; LINE;

D O I：

10.7567/APEX.10.046602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate practical great advantages of the photoluminescence (PL) measurement at liquid N temperature after electron irradiation for quantifying low-level C in Si compared with the measurement at liquid He temperature. The broadening of the C-related C-and G-lines enabled us to detect the lines rapidly with high sensitivity by using the optimized low-dispersion spectroscopic apparatus. Positive correlations were found between their intensity ratios to the band-edge emission and the C concentration estimated by PL measurement at 4.2 K. The disappearance of dopant-impurity-related lines simplifies the recombination process, suggesting the improvement of quantification accuracy. (C) 2017 The Japan Society of Applied Physics

引用

页数：3