Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation

被引：13
作者：
Tajima, Michio [1 ]
Kiuchi, Hirotatsu [1 ]
Higuchi, Fumito [1 ]
Ogura, Atsushi [1 ]
机构：
[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 04期
关键词：
SILICON; CARBON; LINE;
D O I：
10.7567/APEX.10.046602
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate practical great advantages of the photoluminescence (PL) measurement at liquid N temperature after electron irradiation for quantifying low-level C in Si compared with the measurement at liquid He temperature. The broadening of the C-related C-and G-lines enabled us to detect the lines rapidly with high sensitivity by using the optimized low-dispersion spectroscopic apparatus. Positive correlations were found between their intensity ratios to the band-edge emission and the C concentration estimated by PL measurement at 4.2 K. The disappearance of dopant-impurity-related lines simplifies the recombination process, suggesting the improvement of quantification accuracy. (C) 2017 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 41 条
[31]   On the observation of electron-hole liquid luminescence under low excitation in Al2O3-passivated c-Si wafers [J].
Roige, A. ;
Fernandez-Tejero, J. ;
Osso, J. O. ;
Goni, A. R. ;
Martin, I. ;
Voz, C. ;
Alcubilla, R. ;
Vega, L. F. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (11) :943-947
[32]   Ultra-low temperature (≤ 300°C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures [J].
Sadoh, Taizoh ;
Chikita, Hironori ;
Matsumura, Ryo ;
Miyao, Masanobu .
JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)
[33]   Fabrication and characterization of low temperature (<450°C) grown p-Ge/n-Si photodetectors for silicon based photonics [J].
Bandaru, PR ;
Sahni, S ;
Yablonovitch, E ;
Liu, J ;
Kim, HJ ;
Xie, YH .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 113 (01) :79-84
[34]   Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications [J].
Tanner, Philip ;
Iacopi, Alan ;
Phan, Hoang-Phuong ;
Dimitrijev, Sima ;
Hold, Leonie ;
Chaik, Kien ;
Walker, Glenn ;
Dao, Dzung Viet ;
Nguyen, Nam-Trung .
SCIENTIFIC REPORTS, 2017, 7
[35]   Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD [J].
Tang, Zhuorui ;
Gu, Lin ;
Ma, Hongping ;
Dai, Kefeng ;
Luo, Qian ;
Zhang, Nan ;
Huang, Jiyu ;
Fan, Jiajie .
CRYSTALS, 2023, 13 (02)
[36]   Kinetics of Carrier Lifetime Degradation in High-Temperature 1 MeV Electron-Irradiated Cz n-Si Associated with the Formation of Divacancy-Oxygen Defects [J].
Kras'ko, Mykola ;
Kolosiuk, Andrii ;
Povarchuk, Vasyl ;
Voitovych, Vasyl .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (17)
[37]   Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation [J].
Demir, K. Cinar ;
Aydogan, S. ;
Gur, Emre ;
Coskun, C. ;
Aygun, Z. .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2017, 172 (7-8) :650-663
[38]   Boron-modified polysilylcarbodi-imides as precursors for Si-B-C-N ceramics: Synthesis, plastic-forming and high-temperature behavior [J].
Weinmann, M ;
Haug, R ;
Bill, J ;
de Guire, M ;
Aldinger, F .
APPLIED ORGANOMETALLIC CHEMISTRY, 1998, 12 (10-11) :725-734
[39]   Sandwich-like SiCnw/C/Si3N4 porous layered composite for full X-band electromagnetic wave absorption at elevated temperature [J].
Xiao, Shanshan ;
Mei, Hui ;
Han, Daoyang ;
Cheng, Laifei .
COMPOSITES PART B-ENGINEERING, 2020, 183
[40]   Prominent c-axis oriented Si-doped ZnO thin film prepared at low substrate temperature in RF magnetron sputtering and its UV sensing in p-Si/n-SZO heterojunction structures [J].
Karmakar, Laxmikanta ;
Das, Debajyoti .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2021, 151
12345