Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation

被引：13

作者：

Tajima, Michio ^{[1
]}

Kiuchi, Hirotatsu ^{[1
]}

Higuchi, Fumito ^{[1
]}

Ogura, Atsushi ^{[1
]}

机构：

[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 04期

关键词：

SILICON; CARBON; LINE;

D O I：

10.7567/APEX.10.046602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate practical great advantages of the photoluminescence (PL) measurement at liquid N temperature after electron irradiation for quantifying low-level C in Si compared with the measurement at liquid He temperature. The broadening of the C-related C-and G-lines enabled us to detect the lines rapidly with high sensitivity by using the optimized low-dispersion spectroscopic apparatus. Positive correlations were found between their intensity ratios to the band-edge emission and the C concentration estimated by PL measurement at 4.2 K. The disappearance of dopant-impurity-related lines simplifies the recombination process, suggesting the improvement of quantification accuracy. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

共 40 条

[21] Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C-600 °C)
Zaghrioui, Mustapha
Agafonov, Viatcheslav N.
Davydov, Valery A.
MATERIALS RESEARCH EXPRESS, 2020, 7 (01)
[22] Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction
Bhattacharya, Gourab
Venimadhav, A.
MICROELECTRONICS RELIABILITY, 2024, 153
[23] Effect of illumination intensity and temperature on the I-V characteristics of n-C/p-Si heterojunction
Gupta, B
Shishodia, PK
Kapoor, A
Mehra, RM
Soga, T
Jimbo, T
Umeno, M
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 73 (03) : 261 - 267
[24] The effect of temperature on ionic liquid modified Fe-N-C catalysts for alkaline oxygen reduction reaction
Wolker, Thomas
Brunnengraeber, Kai
Martinaiou, Ioanna
Lorenz, Nick
Zhang, Gui-Rong
Kramm, Ulrike, I
Etzold, Bastian J. M.
JOURNAL OF ENERGY CHEMISTRY, 2022, 68 : 324 - 329
[25] Dual N/Pb ion-implanted Si: Temperature dependence of the novel shift of the Pb peak under electron beam annealing
Markwitz, Andreas
Fang, Fang
Johnson, Peter B.
APPLIED SURFACE SCIENCE, 2011, 257 (11) : 4856 - 4862
[26] Enhanced oxidative desulfurization of liquid model fuel under microwave irradiation over W2N@C catalyst nanoarchitectonics
Bhadra, Biswa Nath
Mondol, Md. Mahmudul Hassan
Jhung, Sung Hwa
CHEMICAL ENGINEERING JOURNAL, 2022, 440
[27] High-temperature stability of the mechanical and optical properties of Si-B-C-N films prepared by magnetron sputtering
Kalas, J.
Vernhes, R.
Hreben, S.
Vlcek, J.
Klemberg-Sapieha, J. E.
Martinu, L.
THIN SOLID FILMS, 2009, 518 (01) : 174 - 179
[28] Fabrication of Ta-Si-C targets and their utilization for deposition of low friction wear resistant nanocomposite Si-Ta-C-(N) coatings intended for wide temperature range tribological applications
Bondarev, A. V.
Vorotilo, S.
Shchetinin, I. V.
Levashov, E. A.
Shtansky, D. V.
SURFACE & COATINGS TECHNOLOGY, 2019, 359 : 342 - 353
[29] Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range
Moraki, K.
Bengi, S.
Zeyrek, S.
Bulbul, M. M.
Altindal, S.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (05) : 3987 - 3996
[30] Ultra-low temperature (≤ 300°C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures
Sadoh, Taizoh
Chikita, Hironori
Matsumura, Ryo
Miyao, Masanobu
JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)

← 1 2 3 4 →