Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation

被引：13
作者：
Tajima, Michio [1 ]
Kiuchi, Hirotatsu [1 ]
Higuchi, Fumito [1 ]
Ogura, Atsushi [1 ]
机构：
[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 04期
关键词：
SILICON; CARBON; LINE;
D O I：
10.7567/APEX.10.046602
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate practical great advantages of the photoluminescence (PL) measurement at liquid N temperature after electron irradiation for quantifying low-level C in Si compared with the measurement at liquid He temperature. The broadening of the C-related C-and G-lines enabled us to detect the lines rapidly with high sensitivity by using the optimized low-dispersion spectroscopic apparatus. Positive correlations were found between their intensity ratios to the band-edge emission and the C concentration estimated by PL measurement at 4.2 K. The disappearance of dopant-impurity-related lines simplifies the recombination process, suggesting the improvement of quantification accuracy. (C) 2017 The Japan Society of Applied Physics
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页数：3
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