Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2 solar cells

被引：43
作者：
Raghuwanshi, M. [1 ,2 ]
Cadel, E. [1 ,2 ]
Pareige, P. [1 ,2 ]
Duguay, S. [1 ,2 ]
Couzinie-Devy, F. [3 ]
Arzel, L. [3 ]
Barreau, N. [3 ]
机构：
[1] Univ Rouen, CNRS, UMR 6634, GPM, Ave Univ BP 12, F-76801 St Etienne Du Rouvray, France
[2] INSA Rouen, F-76801 St Etienne Du Rouvray, France
[3] Univ Nantes, CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 01期
关键词：
EFFICIENCY LIMITATIONS; ATOM-PROBE; THIN-FILMS; MODEL;
D O I：
10.1063/1.4890001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reason why so-called wide-bandgap CuIn1-xGaxSe2 (CIGSe with x > 0.4) based solar cells show hindered performance compared with theoretical expectations is still a matter of debate. In the present Letter, atom probe tomography studies of CuIn1-xGaxSe2 polycrystalline thin films with x varying from 0 to 1 are reported. These investigations confirm that the grain boundaries (GBs) of low gallium containing (x < 0.4) CIGSe layers are Cu-depleted compared with grains interior (GI). In contrast, it is observed that the GBs of widest band gap CIGSe films (x > 0.8) are Cu-enriched compared with GI. For intermediate gallium contents (0.4 < x < 0.8), both types of GBs are detected. This threshold value of 0.4 surprisingly coincides with solar cells output voltage deviation from theoretical expectations, which suggests modifications of GBs properties could participate in the loss of photovoltaic performance. (C) 2014 AIP Publishing LLC.
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页数：4
相关论文
共 21 条
[1]   Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration [J].
Barreau, N. ;
Painchaud, T. ;
Couzinie-Devy, F. ;
Arzel, L. ;
Kessler, J. .
ACTA MATERIALIA, 2010, 58 (17) :5572-5577
[2]   Atom probe study of sodium distribution in polycrystalline Cu(In,Ga)Se2 thin film [J].
Cadel, E. ;
Barreau, N. ;
Kessler, J. ;
Pareige, P. .
ACTA MATERIALIA, 2010, 58 (07) :2634-2637
[3]  
Chirila A, 2013, NAT MATER, V12, P1107, DOI [10.1038/NMAT3789, 10.1038/nmat3789]
[4]   Wide bandgap Cu(In,Ga)Se2 solar cells with improved energy conversion efficiency [J].
Contreras, Miguel A. ;
Mansfield, Lorelle M. ;
Egaas, Brian ;
Li, Jian ;
Romero, Manuel ;
Noufi, Rommel ;
Rudiger-Voigt, Eveline ;
Mannstadt, Wolfgang .
PROGRESS IN PHOTOVOLTAICS, 2012, 20 (07) :843-850
[5]   Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth [J].
Couzinie-Devy, F. ;
Cadel, E. ;
Barreau, N. ;
Arzel, L. ;
Pareige, P. .
APPLIED PHYSICS LETTERS, 2011, 99 (23)
[6]  
Couzinie-Devy F., 2011, 2011 37 IEEE PHOT SP
[7]   Efficiency limitations for wide-band-gap chalcopyrite solar cells [J].
Gloeckler, M ;
Sites, JR .
THIN SOLID FILMS, 2005, 480 :241-245
[8]   Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries [J].
Hetzer, MJ ;
Strzhemechny, YM ;
Gao, M ;
Contreras, MA ;
Zunger, A ;
Brillson, LJ .
APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3
[9]   Progress in the efficiency of wide-gap Cu(In1-xGax)Se2 solar cells using CIGSe layers grown in water vapor [J].
Ishizuka, S ;
Sakurai, K ;
Yamada, A ;
Shibata, H ;
Matsubara, K ;
Yonemura, M ;
Nakamura, S ;
Nakanishi, H ;
Kojima, T ;
Niki, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23) :L679-L682
[10]   Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: differences from narrow-gap Cu(In,Ga)Se2 [J].
Ishizuka, Shogo ;
Yamada, Akimasa ;
Fons, Paul J. ;
Shibata, Hajime ;
Niki, Shigeru .
PROGRESS IN PHOTOVOLTAICS, 2014, 22 (07) :821-829
123