Improved efficiency and stability of GaN photoanode in photoelectrochemical water splitting by NiO cocatalyst

被引:53
作者
Kim, Soo Hee [1 ]
Ebaid, Mohamed [1 ]
Kang, Jin-Ho [1 ]
Ryu, Sang-Wan [1 ]
机构
[1] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
基金
新加坡国家研究基金会;
关键词
Water splitting; GaN Photoanode NiO; Cocatalyst; N-TYPE GAN; P-TYPE GAN; FILMS;
D O I
10.1016/j.apsusc.2014.03.151
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The NiO cocatalyst was deposited on a GaN photoanode to improve the water splitting efficiency and to stabilize the photoelectrolysis of the GaN photoanode without corrosion of the GaN layer. The photoanode performance was investigated for various NiO deposition conditions based on metal organic decomposition. The GaN photoanode with the optimized NiO morphology showed significantly improved efficiency and photocurrent stability during water splitting compared to the reference GaN. No corrosion was observed for the GaN photoanode combined with NiO, which confirmed that the enhanced stability was related to the suppressed GaN etching at the surface. The improved water splitting performance was attributed to the fast transport of photo-generated holes in the valence band from GaN to NiO and the efficient water reduction at the NiO/electrolyte interface. 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:638 / 641
页数:4
相关论文
共 17 条
[1]   Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells [J].
Aryal, K. ;
Pantha, B. N. ;
Li, J. ;
Lin, J. Y. ;
Jiang, H. X. .
APPLIED PHYSICS LETTERS, 2010, 96 (05)
[2]   Band-edge Potentials of n-type and p-type GaN [J].
Beach, JD ;
Collins, RT ;
Turner, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (07) :A899-A904
[3]   Photoelectrochemical properties of p-type GaN in comparison with n-type GaN [J].
Fujii, K ;
Ohkawa, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L909-L911
[4]   ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].
FUJISHIMA, A ;
HONDA, K .
NATURE, 1972, 238 (5358) :37-+
[5]   Comparison of the agglomeration behavior of thin metallic films on SiO2 [J].
Gadkari, PR ;
Warren, AP ;
Todi, RM ;
Petrova, RV ;
Coffey, KR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04) :1152-1161
[6]   High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water [J].
Hayashi, Tomoe ;
Deura, Momoko ;
Ohkawa, Kazuhiro .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
[7]   Electrochemistry and photoetching of n-GaN [J].
Huygens, IM ;
Strubbe, K ;
Gomes, WP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) :1797-1802
[8]   Photocatalysis using GaN nanowires [J].
Jung, Hye Seong ;
Hong, Young Joon ;
Li, Yirui ;
Cho, Jeonghui ;
Kim, Yong-Jin ;
Yi, Gyu-Chul .
ACS NANO, 2008, 2 (04) :637-642
[9]  
KIM SU, J NANOSCI N IN PRESS
[10]   Electrochemical etching of highly conductive GaN single crystals [J].
Nowak, G ;
Xia, XH ;
Kelly, JJ ;
Weyher, JL ;
Porowski, S .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) :735-740