Structural properties of (111)B-oriented III-V nanowires

被引：400

作者：

Johansson, J

Karlsson, LS

Svensson, CPT

Martensson, T

Wacaser, BA

Deppert, K

Samuelson, L

Seifert, W

机构：

[1] Lund Univ, Solid State Phys, SE-22100 Lund, Sweden

[2] Lund Univ, Natl Ctr High Resolut Electron Microscopy, SE-22100 Lund, Sweden

[3] QuNano AB, SE-22224 Lund, Sweden

来源：

NATURE MATERIALS | 2006年 / 5卷 / 07期

关键词：

D O I：

10.1038/nmat1677

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Structural properties of < 111 > B-oriented III-V nanowires.

引用

页码：574 / 580

页数：7

共 32 条

[1] Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy [J].

Bhunia, S ;

Kawamura, T ;

Fujikawa, S ;

Nakashima, H ;

Furukawa, K ;

Torimitsu, K ;

Watanabe, Y .

THIN SOLID FILMS, 2004, 464 :244-247

[2] One-dimensional heterostructures in semiconductor nanowhiskers [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060

[3] Transmission electron microscopy study of pseudoperiodically twinned Zn2SnO4 nanowires [J].

Chen, HY ;

Wang, JX ;

Yu, HC ;

Yang, HX ;

Xie, SS ;

Li, JQ .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (07) :2573-2577

[4] STUDY OF TWINS IN GAAS, GAP AND INAS CRYSTALS [J].

CHEN, TP ;

CHEN, FR ;

CHUANG, YC ;

GUO, YD ;

PENG, JG ;

HUANG, TS ;

CHEN, LJ .

JOURNAL OF CRYSTAL GROWTH, 1992, 118 (1-2) :109-116

[5]

COHEN Y, 1986, RES SOCIAL STRATIFIC, V5, P173

[6] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

[7] Supercritical fluid-liquid-solid synthesis of gallium phosphide nanowires [J].

Davidson, FM ;

Wiacek, R ;

Korgel, BA .

CHEMISTRY OF MATERIALS, 2005, 17 (02) :230-233

[8] Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry [J].

Evoy, S ;

DiLello, N ;

Deshpande, V ;

Narayanan, A ;

Liu, H ;

Riegelman, M ;

Martin, BR ;

Hailer, B ;

Bradley, JC ;

Weiss, W ;

Mayer, TS ;

Gogotsi, Y ;

Bau, HH ;

Mallouk, TE ;

Raman, S .

MICROELECTRONIC ENGINEERING, 2004, 75 (01) :31-42

[9] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

[10]

HEDDLE MF, MINER MAG, V5, P271

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