A vertical transport geometry for electrical spin injection and extraction in Si

被引:1
作者
Husain, M. K. [1 ]
Li, X. V. [1 ]
de Groot, C. H. [1 ]
机构
[1] Univ Southampton, Sch Elect & Comp Engn, Southampton SO17 1BJ, Hants, England
关键词
Spin injection; Schottky barriers; Magnetoresistance; FERROMAGNETIC METAL; SILICON; CONTACTS;
D O I
10.1016/j.ssc.2009.05.045
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Schottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current-voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistance-area products could be tuned to obtain high magnetoresistance. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1565 / 1568
页数:4
相关论文
共 14 条
[1]   Efficient spin injection and extraction in modified reverse and forward biased ferromagnetic-semiconductor junctions and low-power ultrafast spin injection devices [J].
Bratkovsky, AM ;
Osipov, VV .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (06) :1237-1246
[2]   High current gain silicon-based spin transistor [J].
Dennis, CL ;
Sirisathitkul, C ;
Ensell, GJ ;
Gregg, JF ;
Thompson, SM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (02) :81-87
[3]   Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier [J].
Hanbicki, AT ;
van 't Erve, OMJ ;
Magno, R ;
Kioseoglou, G ;
Li, CH ;
Jonker, BT ;
Itskos, G ;
Mallory, R ;
Yasar, M ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2003, 82 (23) :4092-4094
[4]   High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs [J].
Husain, Muhammad Khaled ;
Li, Xiaoli V. ;
de Groot, Cornelis Hendrik .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) :499-504
[5]   Spin injection from a ferromagnetic metal into a semiconductor [J].
Jaffrès, H ;
Fert, A .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) :8111-8113
[6]   Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact [J].
Jonker, Berend T. ;
Kioseoglou, George ;
Hanbicki, Aubrey T. ;
Li, Connie H. ;
Thompson, Phillip E. .
NATURE PHYSICS, 2007, 3 (08) :542-546
[7]   Thermionic field emission at electrodeposited Ni-Si Schottky barriers [J].
Kiziroglou, M. E. ;
Li, X. ;
Zhukov, A. A. ;
de Groot, R. A. J. ;
de Groot, C. H. .
SOLID-STATE ELECTRONICS, 2008, 52 (07) :1032-1038
[8]   Analysis of thermionic emission from electrodeposited Ni-Si Schottky barriers [J].
Kiziroglou, M. E. ;
Zhukov, A. A. ;
Li, X. ;
Gonzalez, D. C. ;
de Groot, P. A. J. ;
Bartlett, P. N. ;
de Groot, C. H. .
SOLID STATE COMMUNICATIONS, 2006, 140 (11-12) :508-513
[9]   Electrical detection of spin transport in lateral ferromagnet-semiconductor devices [J].
Lou, Xiaohua ;
Adelmann, Christoph ;
Crooker, Scott A. ;
Garlid, Eric S. ;
Zhang, Jianjie ;
Reddy, K. S. Madhukar ;
Flexner, Soren D. ;
Palmstrom, Chris J. ;
Crowell, Paul A. .
NATURE PHYSICS, 2007, 3 (03) :197-202
[10]   Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets [J].
Min, Byoung-Chul ;
Motohashi, Kazunari ;
Lodder, Cock ;
Jansen, Ron .
NATURE MATERIALS, 2006, 5 (10) :817-822