Current flow in upcoming microelectronic devices

被引：0

作者：

Sverdlov, Viktor ^{[1
]}

Kosina, Hans ^{[1
]}

Selberherr, Siegfried ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, Gusshausstr 27-29, A-1040 Vienna, Austria

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS, AND SYSTEMS | 2006年

基金：

奥地利科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of models used for the simulation of current transport in upcoming microelectronic devices within the framework of TCAD applications is presented. Modern enhancements of semiclassical transport models based on microscopic theories as well as quantum mechanical methods used to describe coherent and dissipative quantum transport are specifically addressed. This comprises the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches accounting for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer's perspective and an outlook on future research directions is given.

引用

页码：3 / +

页数：2

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