RFIC TaN/SrTio3/TaN MIM capacitors with 35 fF/μm2 capacitance density

被引：7
作者：
Huang, C. C. [1 ]
Chiang, K. C.
Kao, H. L.
Chin, Albert
Chen, W. J.
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Nano Sci Technol Ctr, Hsinchu 30050, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
[3] Natl Pingtung Univ Sci & Technol, Grad Inst Mat Engn, Pingtung, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 09期
关键词：
capacitor; International Technology Roadmap for Semiconductors (ITRS); metal-insulator-metal (MIM); radio frequency integrated circuit (RF IC); SrTiO3;
D O I：
10.1109/LMWC.2006.880709
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
引用
收藏
页码：493 / 495
页数：3
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