Thermal degradation of DRAM retention time: Characterization and improving techniques

被引：36

作者：

Kim, YI ^{[1
]}

Yang, KH ^{[1
]}

Lee, WS ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, DRAM Proc Architecture Team, DRAM Dev Div, Hwasung, Gyeonggi Do, South Korea

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Variation of DRAM retention time and reliability problem induced by thermal stress was investigated. Most of the DRAM cells revealed 2-state retention time with thermal stress. The effects of hydrogen annealing condition and fluorine implantation on the variation of retention time and reliability are discussed.

引用

页码：667 / 668

页数：2