SiNW array;
diameter controllable;
large scale;
bi-layer catalyst;
dewetting;
SI NANOWIRES;
GROWTH;
D O I:
10.1088/0957-4484/25/25/255302
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We report on a novel solution etching method to fabricate vertically aligned aperiodic silicon nanowire (SiNW) arrays. We begin with a simple dewetting process to fabricate a monolayer of well-spaced metal particles in situ on a silicon wafer. The particles function as a sacrificial template to pattern a Ti/Au catalyst film into a metal mesh and the size of particles directly determines the diameter of SiNW. A conventional metal-assisted chemical etching process is then carried out with the obtained metal mesh as a catalyst to realize a vertically aligned SiNW array at a large scale and low cost.
机构:Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
Huang, Zhipeng
Fang, Hui
论文数: 0引用数: 0
h-index: 0
机构:Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
Fang, Hui
Zhu, Jing
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R ChinaTsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
机构:Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
Huang, Zhipeng
Fang, Hui
论文数: 0引用数: 0
h-index: 0
机构:Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
Fang, Hui
Zhu, Jing
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R ChinaTsinghua Univ, Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China