III-V compounds as single photon emitters

被引:9
作者
Wang, Xu [1 ,2 ]
Xu, Lei [1 ]
Jiang, Yun [1 ]
Yin, Zhouyang [1 ]
Chan, Christopher C. S. [3 ]
Deng, Chaoyong [1 ]
Taylor, Robert A. [4 ]
机构
[1] Guizhou Univ, Key Lab Elect Funct Composite Mat Guizhou Prov, Guiyang 550025, Guizhou, Peoples R China
[2] Guizhou Inst Quantum Informat & Big Data Appl Tec, Guiyang 550002, Guizhou, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong 999077, Peoples R China
[4] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
基金
英国工程与自然科学研究理事会;
关键词
single photon emitters; solid-states; quantum dots; 2D materials; INGAN QUANTUM DOTS; SOLID-STATE SOURCE; SPONTANEOUS EMISSION; POINT-DEFECTS; LIGHT; PHOTOLUMINESCENCE; SPECTROSCOPY; PERFORMANCE; FABRICATION; EXTRACTION;
D O I
10.1088/1674-4926/40/7/071906
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from III-V compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in III-V compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.
引用
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页数:12
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