Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core-Shell Nanowires

被引：34

作者：

Fukata, Naoki ^{[1
]}

Yu, Mingke ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Takei, Toshiaki ^{[1
]}

Bando, Yoshio ^{[1
]}

Wu, Wenzhuo ^{[2
]}

Wang, Zhong Lin ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ACS NANO | 2015年 / 9卷 / 12期

关键词：

core-shell nanowires; doping; Raman scattering; Fano resonance; FIELD-EFFECT TRANSISTORS; CORE/SHELL NANOWIRES; SILICON NANOWIRES; STRAIN RELAXATION; GE NANOWIRES; HETEROSTRUCTURES; GROWTH; GERMANIUM; MOBILITY; SI;

D O I：

10.1021/acsnano.5b05394

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Selective doping and band-offset in germanium (Ge)/silicon (Si) core-shell nanowire (NW) structures can realize a type of high electron mobility transistor structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Farm effect. The Fano effect is the most important to demonstrate hole gas accumulation in Ge/Si core-shell NWs. Using these techniques, we obtained conclusive evidence of the hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B-doping concentration in the Si shell.

引用

页码：12182 / 12188

页数：7

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