Room-temperature magnetism in Cr-doped AlN semiconductor films

被引：146

作者：

Yang, SG ^{[1
]}

Pakhomov, AB ^{[1
]}

Hung, ST ^{[1
]}

Wong, CY ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, MAGIC, Mat Characterizat & Preparat Facil, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期

关键词：

D O I：

10.1063/1.1509475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synthesis and characterization of magnetic semiconductors Al1-xCrxN, in which the atomic fraction of chromium x is up to 0.357, are reported. The films, grown by reactive co-sputtering on silicon, glass, and kapton substrates, have a crystal structure of aluminum nitride. Magnetic and transport properties were studied in the temperature range of 50 to 340 K. The materials are in the dielectric regime and have variable-range-hopping type of conductance. The films are ferromagnetic at temperatures over 340 K. (C) 2002 American Institute of Physics.

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页码：2418 / 2420

页数：3

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