High-Speed, Low-Power, Magnetic Non-Volatile Flip-Flop With Voltage-Controlled, Magnetic Anisotropy Assistance

被引:38
|
作者
Kang, Wang [1 ,2 ]
Ran, Yi [1 ,3 ]
Lv, Weifeng [1 ,2 ]
Zhang, Youguang [1 ,3 ]
Zhao, Weisheng [1 ,3 ]
机构
[1] Beihang Univ, Fert Beijing Inst, BDBC, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Comp Sci & Engn, Beijing 100191, Peoples R China
[3] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Spin electronics; magnetic non-volatile flip-flop; magnetic tunnel junction; spin-transfer torque; spin-Hall effect; voltage-controlled magnetic anisotropy effect; MOORES LAW;
D O I
10.1109/LMAG.2016.2604205
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A magnetic non-volatile flip-flop (MNV-FF) design, with the assistance of voltage-controlled magnetic anisotropy (VCMA) effect, is proposed for low-power and high-speed applications. The MNV-FF employs perpendicular-anisotropy magnetic junnel junctions (MTJs) and exploits the VCMA effect for assisting data backup operations, in cooperation with either spin-transfer torque (STT) or spin-Hall effect (SHE). Thanks to the VCMA assistance, the required STT or SHE current density and pulse duration can be greatly reduced for MTJ switching, resulting in faster and more energy-efficient operations. Our simulation results show that the proposed VCMA-assisted MNV-FFs can achieve 98.4% and 74.6% improvement in data backup energy, and 89.5% and 19.0% improvement in data backup delay, compared to conventional STT-and SHE-based MNV-FFs, respectively.
引用
收藏
页码:1 / 5
页数:5
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