Surface roughening in Si1-xGex alloy films by 100 MeV Au:: Composition dependency

被引:3
作者
Kanjilal, A.
Kanjilal, D.
机构
[1] Univ Roma La Sapienza, Dept Phys, LOTUS Lab, INFM,CNR, I-00185 Rome, Italy
[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[3] IUAC, New Delhi 110067, India
关键词
SiGe; atomic force microscopy; surface roughening; irradiation;
D O I
10.1016/j.ssc.2006.07.013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using a 100 MeV An beam, the surface roughening kinetics of relaxed Si1-xGex alloy films for x = 0.5 and 0.7 are studied by means of ex-situ atomic force microscopy (AFM). Swift heavy ion (SHI) irradiation induced surface roughening behavior is demonstrated using the trend in variation of beta as a function of fluence when the data are analyzed in terms of the Edwards-Wilkinson (EW) model. By employing the EW model, the observed surface roughening is explained on the basis of the competition between SHI induced sputtering and smoothening through redeposition of the sputtered atoms. The composition dependent variation of surface morphology with increasing fluence is discussed in the light of the strain distribution along the sample surface. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:531 / 536
页数:6
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