A-Si:H/μc-Si:H tandem solar cell by novel PECVD method

被引：0

作者：

Niira, K ^{[1
]}

Senta, H ^{[1
]}

Nishimura, T ^{[1
]}

Hakuma, H ^{[1
]}

Komoda, M ^{[1
]}

Okui, H ^{[1
]}

Aramaki, K ^{[1
]}

Okada, Y ^{[1
]}

Tomita, K ^{[1
]}

Higuchi, H ^{[1
]}

机构：

[1] Kyocera Corp, Shiga 5278555, Japan

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Using newly developed novel PECVD method ("Cat-PECVD method"), high quality a-Si:H films and Lc-Si:H films were successfully formed at high deposition rate of more than 1nm/s with low substrate temperature of less than 250 degreesC. Applying these Si films for a-Si:H / muc-Si:H tandem solar cells, initial cell efficiency of 11.5 % was obtained. Owing to a low Si-H-2 bonding state content and less distorted short range order structure of the a-Si:H film, the light-induced degradation rate of tandem cell was effectively reduced to less than 7 %.

引用

页码：1852 / 1855

页数：4

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