Influence of interfacial dislocations on hysteresis loops of ferroelectric films

被引：39

作者：

Li, Y. L. ^{[1
]}

Hu, S. Y. ^{[2
]}

Choudhury, S. ^{[1
]}

Baskes, M. I.

Saxena, A.

Lookman, T.

Jia, Q. X. ^{[3
]}

Schlom, D. G. ^{[1
]}

Chen, L. Q. ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Pacific NW Natl Lab, Richland, WA 99354 USA

[3] Los Alamos Natl Lab, MPA STC, Los Alamos, NM 87545 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期

基金：

美国国家科学基金会;

关键词：

barium compounds; coercive force; dielectric hysteresis; dielectric polarisation; dislocation density; electric domains; ferroelectric thin films;

D O I：

10.1063/1.3021354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.

引用

页数：6

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