Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts

被引：13

作者：

Syrkin, A ^{[1
]}

Dmitriev, V

Kovalenkov, O

Bauman, D

Crofton, J

机构：

[1] Technol & Devices Int Inc, Gaithersburg, MD 20877 USA

[2] Crystal Growth Res Ctr, RU-194021 St Petersburg, Russia

[3] Murray State Univ, Murray, KY 42701 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

liquid-phase epitaxy; ohmic contacts; silicon carbide devices;

D O I：

10.4028/www.scientific.net/MSF.389-393.291

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report on ohmic contacts to p-type silicon carbide with record low specific contact resistance. The contacts were formed to p(+)-SiC layers with high Al concentration grown by liquid phase epitaxy (LPE) on 2 inch 6H and 4H-SiC samples. Al atomic concentration in LPE grown layers exceeded 1x10(20) cm(-3). Ti-Al ohmic contacts with contact resistivity in 10(-6) Omegaxcm(2) range were fabricated to both p-6H-SiC and p-4H-SiC materials in reproducible manner. Developed LPE technology may substitute ion implantation technique for p(+)-contact layer formation for power SiC devices.

引用

页码：291 / 294

页数：4