Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts

被引：13
|
作者：
Syrkin, A [1 ]
Dmitriev, V
Kovalenkov, O
Bauman, D
Crofton, J
机构：
[1] Technol & Devices Int Inc, Gaithersburg, MD 20877 USA
[2] Crystal Growth Res Ctr, RU-194021 St Petersburg, Russia
[3] Murray State Univ, Murray, KY 42701 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
liquid-phase epitaxy; ohmic contacts; silicon carbide devices;
D O I：
10.4028/www.scientific.net/MSF.389-393.291
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we report on ohmic contacts to p-type silicon carbide with record low specific contact resistance. The contacts were formed to p(+)-SiC layers with high Al concentration grown by liquid phase epitaxy (LPE) on 2 inch 6H and 4H-SiC samples. Al atomic concentration in LPE grown layers exceeded 1x10(20) cm(-3). Ti-Al ohmic contacts with contact resistivity in 10(-6) Omegaxcm(2) range were fabricated to both p-6H-SiC and p-4H-SiC materials in reproducible manner. Developed LPE technology may substitute ion implantation technique for p(+)-contact layer formation for power SiC devices.
引用
收藏
页码：291 / 294
页数：4
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