Communication-Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

被引：2

作者：

Yao, Jing-Neng ^{[1
]}

Lin, Yueh-Chin ^{[2
]}

Wong, Ying-Chieh ^{[2
]}

Huang, Ting-Jui ^{[3
]}

Hsu, Heng-Tung ^{[3
]}

Sze, Simon M. ^{[1
]}

Chang, Edward Yi ^{[1
,2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 06期

关键词：

IMPACT IONIZATION; PERFORMANCE; TRANSISTOR; CMOS;

D O I：

10.1149/2.0141906jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society.

引用

页码：P319 / P321

页数：3

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