Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons

被引:66
作者
Lin, Weinan [1 ,2 ]
Li, Lei [3 ,4 ]
Dogan, Fatih [5 ,6 ]
Li, Changjian [1 ]
Rote, Helene [7 ]
Yu, Xiaojiang [8 ]
Zhang, Bangmin [1 ]
Li, Yangyang [1 ]
Lew, Wen Siang [2 ]
Wang, Shijie [9 ]
Prellier, Wilfrid [7 ]
Pennycook, Stephen J. [1 ]
Chen, Jingsheng [1 ]
Zhong, Zhicheng [3 ,4 ,10 ]
Manchon, Aurelien [6 ]
Wu, Tom [11 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[3] Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
[5] Amer Univ Middle East, Coll Engn & Technol, Eqaila 15453, Kuwait
[6] King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239556900, Saudi Arabia
[7] ENSICAEN, Lab CRISMAT, CNRS, UMR 6508, 6 Blvd Marechal Juin, F-14050 Caen, France
[8] Natl Univ Singapore, Singapore Synchrotron Light Source, Singapore 117575, Singapore
[9] Inst Mat Res & Engn, Singapore 117602, Singapore
[10] Univ Chinese Acad Sci, China Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[11] UNSW, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
基金
国家重点研发计划; 新加坡国家研究基金会;
关键词
EMERGENT PHENOMENA; WEAK-LOCALIZATION; CONVERSION; GAS;
D O I
10.1038/s41467-019-10961-z
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO3//SrTiO3/LaAlO3 (LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals. Such asymmetric oxide heterostructures with initially centrosymmetric materials provide a general strategy for tuning the Rashba SOI in artificial quantum materials.
引用
收藏
页数:7
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