Laser ablation of sapphire with ultrashort pulses

被引：5

作者：

Stoian, R ^{[1
]}

Ashkenasi, D ^{[1
]}

Rosenfeld, A ^{[1
]}

Campbell, EEB ^{[1
]}

机构：

[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany

来源：

HIGH-POWER LASER ABLATION II | 2000年 / 3885卷

关键词：

laser ablation; ultrashort pulses; sapphire; damage threshold; Coulomb explosion; phase explosion;

D O I：

10.1117/12.376955

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present the results of our investigations on the surface damage/ablation threshold and processing morphology for sapphire after single and multiple laser pulse irradiation at 800 nm in the picosecond and sub-picosecond duration range. The threshold for ablation drops sharply for multiple laser shot irradiation, due to material dependent incubation effects. We observe two distinctively etch phases " gentle" and " strong". Monitoring the mechanism and dynamics of the ion expulsion using combination of time-of-flight mass spectroscopy and femtosecond pump-probe technique, we identified Coulomb explosion as the dominant mechanism for ion emission in the " gentle" etch phase on a time scale of 1 ps. The momenta of the emitted ions are equal under these conditions. After sufficient incubation the damage threshold decreases and the ablation is shifted towards the " strong" phase. The velocity distributions shift to lower values, evidence for " phase explosion" is seen and the ions tend here to equal kinetic energies.

引用

页码：121 / 131

页数：11

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