High-Quality Cs2AgBiBr6 Double Perovskite Film for Lead-Free Inverted Planar Heterojunction Solar Cells with 2.2% Efficiency

被引：355

作者：

Gao, Weiyin ^{[1
]}

Ran, Chenxin ^{[1
]}

Xi, Jun ^{[1
]}

Jiao, Bo ^{[1
]}

Zhang, Wenwen ^{[2
]}

Wu, Mincai ^{[3
]}

Hou, Xun ^{[1
]}

Wu, Zhaoxin ^{[1
,4
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Key Lab Photon Technol Informat, Minist Educ,Key Lab Phys Elect & Devices, 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China

[2] Xian Univ Post & Telecommun, Sch Elect Enginnering, Changan West St Changan Dist, Xian 710121, Shaanxi, Peoples R China

[3] Northwest Univ Xian, Dept Elect Sci & Technol, 229 Taibai North Rd, Xian 710069, Shaanxi, Peoples R China

[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, 92 Wucheng Rd, Taiyuan 030006, Shanxi, Peoples R China

来源：

CHEMPHYSCHEM | 2018年 / 19卷 / 14期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

anti-solvent; Cs2AgBiBr6; lead-free double perovskite; micro-sized grains; planar heterojunction solar cells; HALIDE DOUBLE PEROVSKITES; CRYSTAL; EVOLUTION; DESIGN; PHASE;

D O I：

10.1002/cphc.201800346

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

All-inorganic double-metal perovskite materials have recently gained much attention due to their three dimensionality (3D) and non-toxic nature to replace lead-based perovskite materials. Among all those double perovskite materials, theoretical works have demonstrated that Cs2AgBiBr6 shows high stability and possesses a suitable band gap for solar-cell applications. However, the film-forming ability of Cs2AgBiBr6 is found to be the utmost challenge hindering its development in thin-film solar-cell devices. In this work, a high-quality Cs2AgBiBr6 film with ultra-smooth morphology, micro-sized grains, and high crystallinity is realized via anti-solvent dropping technology and post-annealing at high temperature. After optimization, the first example of an inverted planar heterojunction solar-cell device based on Cs2AgBiBr6 exhibits a power conversion efficiency of 2.23% with V-OC=1.01V, J(SC)=3.19mA/cm(2), and FF=69.2%. Besides, the device shows no hysteresis and a high stability.

引用

页码：1696 / 1700

页数：5

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