5G Millimeter-Wave Phased-Array Transceiver: System Considerations and Circuit Implementations

被引：0

作者：

Zhao, Dixian ^{[1
]}

Zhang, Jiajun ^{[1
]}

Yi, Yongran ^{[1
]}

Gu, Peng ^{[1
]}

Jiang, Ning ^{[1
]}

机构：

[1] Southeast Univ, Natl Mobile Commun Res Lab, Nanjing 211189, Jiangsu, Peoples R China

来源：

2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2019年

关键词：

phased-array transceiver; power amplifier; low-noise amplifier; phase shifter; variable gain amplifier; millimeter-wave; 5G;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, system considerations and circuit implementations for 5G millimeter-wave (mm-Wave) phased-array transceiver are presented. High data-rate and medium-range communications pose challenges for the design of phased-array transceiver circuits operating at the mm-Wave band. A possible solution is that the core chip for digital, mixed-signal and RF processing blocks are integrated in advanced CMOS, while power amplifier (PA), low-noise amplifier (LNA) and RF switch are implemented in III-V technologies (i.e., GaAs or GaN). To show the feasibility of such system architecture, key building blocks include high power amplifier (HPA), broadband LNA, amplitude-invariant phase shifter and phase-invariant variable gain amplifier (VGA) are reviewed. The proposed techniques make the mm-Wave phased-array transceiver systems suitable for 5G fixed wireless access (FWA) applications.

引用

页数：4

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