Spin transport in graphene/transition metal dichalcogenide heterostructures

被引:145
作者
Garcia, Jose H. [1 ,2 ]
Vila, Marc [1 ,2 ,3 ]
Cummings, Aron W. [1 ,2 ]
Roche, Stephan [1 ,2 ,4 ]
机构
[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
[2] BIST, Campus UAB, Barcelona 08193, Spain
[3] Univ Autonoma Barcelona, Dept Phys, Campus UAB, E-08193 Barcelona, Spain
[4] ICREA, Barcelona 08010, Spain
关键词
DER-WAALS HETEROSTRUCTURES; ELECTRICAL DETECTION; BALLISTIC TRANSPORT; ORBIT INTERACTION; GRAPHENE; RELAXATION; PRECESSION; MOBILITY; SINGLE; CHARGE;
D O I
10.1039/c7cs00864c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long distances. However, such outstanding transport properties also limit the capability to engineer active spintronics, where strong spin-orbit coupling is crucial for creating and manipulating spin currents. To this end, transition metal dichalcogenides, which have larger spin-orbit coupling and good interface matching, appear to be highly complementary materials for enhancing the spin-dependent features of graphene while maintaining its superior charge transport properties. In this review, we present the theoretical framework and the experiments performed to detect and characterize the spin-orbit coupling and spin currents in graphene/transition metal dichalcogenide heterostructures. Specifically, we will concentrate on recent measurements of Hanle precession, weak antilocalization and the spin Hall effect, and provide a comprehensive theoretical description of the interconnection between these phenomena.
引用
收藏
页码:3359 / 3379
页数:21
相关论文
共 159 条
[81]   Interfacial Interactions in van der Waals Heterostructures of MoS2 and Graphene [J].
Li, Hai ;
Wu, Jiang-Bin ;
Ran, Feirong ;
Lin, Miao-Ling ;
Liu, Xue-Lu ;
Zhao, Yanyuan ;
Lu, Xin ;
Xiong, Qihua ;
Zhang, Jun ;
Huang, Wei ;
Zhang, Hua ;
Tan, Ping-Heng .
ACS NANO, 2017, 11 (11) :11714-11723
[82]   Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides [J].
Liu, Gui-Bin ;
Shan, Wen-Yu ;
Yao, Yugui ;
Yao, Wang ;
Xiao, Di .
PHYSICAL REVIEW B, 2013, 88 (08)
[83]  
Lowdin P.-O., 2013, J CHEM PHYS, V499, P419
[84]   Defect-Mediated Spin Relaxation and Dephasing in Graphene [J].
Lundeberg, M. B. ;
Yang, R. ;
Renard, J. ;
Folk, J. A. .
PHYSICAL REVIEW LETTERS, 2013, 110 (15)
[85]   Contact-induced spin relaxation in Hanle spin precession measurements [J].
Maassen, T. ;
Vera-Marun, I. J. ;
Guimaraes, M. H. D. ;
van Wees, B. J. .
PHYSICAL REVIEW B, 2012, 86 (23)
[86]   Theory of spin torque due to spin-orbit coupling [J].
Manchon, A. ;
Zhang, S. .
PHYSICAL REVIEW B, 2009, 79 (09)
[87]   Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing [J].
Mao, Shun ;
Chang, Jingbo ;
Pu, Haihui ;
Lu, Ganhua ;
He, Qiyuan ;
Zhang, Hua ;
Chen, Junhong .
CHEMICAL SOCIETY REVIEWS, 2017, 46 (22) :6872-6904
[88]  
Marmolejo-Tejada J. M., 2017, ARXIV170609361
[89]   Observation of electron-hole puddles in graphene using a scanning single-electron transistor [J].
Martin, J. ;
Akerman, N. ;
Ulbricht, G. ;
Lohmann, T. ;
Smet, J. H. ;
Von Klitzing, K. ;
Yacoby, A. .
NATURE PHYSICS, 2008, 4 (02) :144-148
[90]   Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature [J].
Mayorov, Alexander S. ;
Gorbachev, Roman V. ;
Morozov, Sergey V. ;
Britnell, Liam ;
Jalil, Rashid ;
Ponomarenko, Leonid A. ;
Blake, Peter ;
Novoselov, Kostya S. ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Geim, A. K. .
NANO LETTERS, 2011, 11 (06) :2396-2399