Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

被引：6
|
作者：
Chen, YH
Wang, ZG
Yang, Z
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 06期
关键词：
D O I：
10.1063/1.372278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple model is presented to discuss the effect of As precipitates on the Fermi level in GaAs grown by molecular-beam epitaxy at low temperature (LT-GaAs). This model implements the compensation between point defects and the depletion of arsenic precipitates. The condition that the Fermi level is pinned by As precipitates is attained. The shifts of the Fermi level in LT-GaAs with annealing temperature are explained by our model. Additionally, the role of As precipitates in conventional semi-insulating GaAs is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)09905-9].
引用
收藏
页码：2923 / 2925
页数：3
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