Effect of substrate bias on crystallization temperature and dielectric properties of sputtered Ta2O5 films

At the substrate temperature of 620degreesC, crystalline Ta2O5 films were sputtered by introducing suitable negative substrate bias of 100similar to200V. It was thought that the ion bombardment to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta2O5 films was improved and the crystallization temperature was lowered. Meanwhile, the C - V result indicated that the dielectric properties of Ta2O5 films were further improved by introducing negative substrate bias.