Silicon Nanofabrication Technologies for compact integrated receivers working at THz frequencies

被引：0

作者：

Jung, C. ^{[1
]}

Lee, C. ^{[1
]}

Chattopadhyay, G. ^{[1
]}

Siles, J. ^{[1
]}

Reck, T. ^{[1
]}

Lin, R. ^{[1
]}

Cooper, K. ^{[1
]}

Mehdi, I. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon nanofabrication technologies provide precise dimensional control and batch processing capability. These features have been exploited to enable novel active and passive components in the submillimeter-wave region. We report on silicon micromachined methodologies that will enable large format submillimeter-wave heterodyne arrays and 3-D integration of the whole receiver front-end.

引用

页数：2