Effect on Shell Thickness on Intersubband Transition Energies in GaAs/AlxGa1-xAs Inverted Core-Shell Nanodot

被引:0
作者
Deyasi, Arpan [1 ]
Bhattacharyya, S. [2 ]
Das, N. R. [3 ]
机构
[1] RCC Inst Informat Technol, Canal South Rd, Kolkata 700015, India
[2] Asansol Engn Coll, Burdwan 713305, W Bengal, India
[3] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India
来源
ADVANCED NANOMATERIALS AND NANOTECHNOLOGY | 2013年 / 143卷
关键词
Finite difference technique; Energy eigenvalue; Inverted core-shell nanodot; Intersubband transition energies; QUANTUM DOTS; EIGENFUNCTIONS; NANOCRYSTALS;
D O I
10.1007/978-3-642-34216-5_55
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Energy eigenvalues of an inverted core-shell spherical quantum dot is numerically computed using finite difference technique, and corresponding intersubband transition energies are evaluated for the lowest three eigenstates. GaAs/AlxGa1-xAs material composition is considered for simulation purpose. Al mole fraction of the heterostrucutre is varied within type-I limit to see the effect on the eigenstates and transition energies. Dimensional effect is also studied by varying thickness of constant dot size as well as by varying inner radius of constant dot thickness. Fine optical tuning may be obtained by suitably applying this effect on quantum dot laser. The analysis is carried out by taking into consideration conduction band discontinuity and effective mass mismatch at core-shell junction following BenDaniel Duke boundary condition.
引用
收藏
页码:551 / 560
页数:10
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