Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

被引:12
作者
Huebner, Torsten [1 ]
Martens, Ulrike [2 ]
Walowski, Jakob [2 ]
Muenzenberg, Markus [2 ]
Thomas, Andy [3 ]
Reiss, Guenter [1 ]
Kuschel, Timo [1 ]
机构
[1] Bielefeld Univ, Ctr Spinelect Mat & Devices, Dept Phys, Univ Str 25, D-33615 Bielefeld, Germany
[2] Greifswald Univ, Inst Phys, Felix Hausdorff Str 6, D-17489 Greifswald, Germany
[3] Leibniz Inst Solid State & Mat Res Dresden IFW Dr, Inst Metall Mat, Helmholtzstr 20, D-01069 Dresden, Germany
关键词
spin caloritronics; magnetic tunnel junctions; tunnel magneto-Seebeck effect; thermal conductivity; thin insulating films; finite-element modeling; TEMPERATURE; MGAL2O4; JUNCTIONS; AL2O3; MGO;
D O I
10.1088/1361-6463/aabfb3
中图分类号
O59 [应用物理学];
学科分类号
摘要
In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K . m)(-1)) and MgO (5.8 W (K . m)(-1)), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.
引用
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页数:5
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