Effect of carrier gas on GaN epilayer characteristics

被引：58

作者：

Cho, Y. S. ^{[1
]}

Hardtdegen, H. ^{[1
]}

Kaluza, N. ^{[1
]}

Thillosen, N. ^{[1
]}

Steins, R. ^{[1
]}

Sofer, Z. ^{[1
]}

Lueth, H. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Thin Films & Interfaces,ISG 1, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565121

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H-2), nitrogen (N-2) and H-2/N-2 mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N-2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：1408 / 1411

页数：4

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