2H-SiC films grown by laser chemical vapor deposition

被引：15

作者：

Ito, Akihiko ^{[1
]}

Kanno, Hitoshi ^{[1
]}

Goto, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2015年 / 35卷 / 16期

基金：

日本学术振兴会;

关键词：

Silicon carbide; 2H-SiC; Film; Chemical vapor deposition; SILICON-CARBIDE; SIC FILMS; NITROGEN; TRIS(DIMETHYLAMINO)SILANE; SPECTROSCOPY; TRANSPORT; POLYTYPE; CRYSTAL; CVD;

D O I：

10.1016/j.jeurceramsoc.2015.08.028

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 mu m h(-1). (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：4611 / 4615

页数：5

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