Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes

被引:50
作者
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
机构
[1] Dept. of Research and Development, Nichia Chemical Industries, Limited, Kaminaka, Anan, Tokushima 774
关键词
D O I
10.1063/1.118211
中图分类号
O59 [应用物理学];
学科分类号
摘要
Longitudinal modes with a mode separation of 0.04 nm were observed on InGaN multiquantum well structure laser diodes (LDs). Other peaks different from the longitudinal modes, appeared with increasing current above the threshold current. Lasing was observed up to a pulsed current duty ratio of 40%. The operating voltage of the LDs at the threshold was around 11 V. Ultrashort pulsed light from the LDs with a pulse width of 50 ps, an output power of 300 mW, and a peak wavelength of 404.2 nm was obtained. The damping constant and the frequency of the relaxation oscillation were 0.8 ns and 3 GHz, respectively. (C) 1997 American Institute of Physics.
引用
收藏
页码:616 / 618
页数:3
相关论文
共 15 条
[1]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[2]  
CHICHIBU S, 1996, UNPUB 38 EL MAT C W
[3]   MANY-BODY COULOMB EFFECTS IN ROOM-TEMPERATURE II-VI QUANTUM-WELL SEMICONDUCTOR-LASERS [J].
CHOW, WW ;
KOCH, SW .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :3004-3006
[4]   SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS [J].
KHAN, MA ;
KUZNIA, JN ;
OLSON, DT ;
BLASINGAME, M ;
BHATTARAI, AR .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2455-2456
[5]   Characteristics of InGaN multi-quantum-well-structure laser diodes [J].
Nakamura, S ;
Senoh, M ;
Nagahama, SI ;
Iwasa, N ;
Yamada, T .
APPLIED PHYSICS LETTERS, 1996, 68 (23) :3269-3271
[6]   InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y .
APPLIED PHYSICS LETTERS, 1996, 68 (15) :2105-2107
[7]   InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220
[8]   HIGH-QUALITY INGAN FILMS GROWN ON GAN FILMS [J].
NAKAMURA, S ;
MUKAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1457-L1459
[9]   InGaN-based multi-quantum-well-structure laser diodes [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76
[10]   INSITU MONITORING OF GAN GROWTH USING INTERFERENCE EFFECTS [J].
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1620-1627