Low-temperature deposition of Cu(InGa)Se2 solar cells on various substrates

被引：4

作者：

Marsillac, S ^{[1
]}

Dorn, S ^{[1
]}

Rocheleau, R ^{[1
]}

Miller, E ^{[1
]}

机构：

[1] Hawaii Nat Energy Inst, Honolulu, HI 96822 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 82卷 / 1-2期

关键词：

solar cells; Cu(In; Ga)Se-2; low-temperature deposition; alkaline effect;

D O I：

10.1016/j.solmat.2004.01.004

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of Cu(In,Ga)Se-2 were deposited at substrate temperatures (T-ss) of 550degreesC and 350degreesC on soda-lime glass/Mo and titanium foil/Mo. The effects of these parameters on the physicochemical, optical and electrical properties of the films were studied as well as the influence of an alkaline source in the films. The control of the composition of the films using the end point detection method was also studied. Solar cells were then fabricated and the influences of the same parameters were analyzed. Efficiencies ranged from above 12% on both substrates at 550degreesC in the presence of Na to 10% on Ti without Na. Lower efficiencies were obtained at 350degreesC due in part to difficulty with the end point detection technique and in part to smaller grain sizes. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：45 / 52

页数：8

共 8 条

[1]

[Anonymous], P 26 IEEE PHOT SPEC

[2] Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors [J].