Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs

被引：3

作者：

Ariyoshi, K. ^{[1
]}

Harada, S. ^{[1
]}

Senzaki, J. ^{[1
]}

Kojima, T. ^{[1
]}

Kojima, K. ^{[1
]}

Tanaka, Y. ^{[1
]}

Shinohe, T. ^{[1
]}

机构：

[1] R&D Partnerships Future Power Elect Technol, Minato Ku, Tokyo 1050001, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Trench MOSFET; UMOSFET; (11-20); gate oxide; channel mobility; nitridation; SIO2/SIC INTERFACE; NITROUS-OXIDE; OXIDATION; MOBILITY; N2O; SILICON;

D O I：

10.4028/www.scientific.net/MSF.778-780.615

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied gate oxide processes for SiC trench MOSFETs. It is demonstrated that nitridation of gate oxide is effective to suppress the variation of channel mobility depending on channel plane orientation and substrate off-angles. In addition, improved channel mobility has been obtained by the combined process of NH3 and N2O POA.

引用

页码：615 / 618

页数：4

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