Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates

被引：45
作者：
Johnston, AH
Lee, CI
Rax, BG
机构：
[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期
关键词：
D O I：
10.1109/23.556904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of very low dose rate irradiation is investigated for several linear bipolar devices that are sensitive to enhanced low dose-rate damage, including one device with super-beta input transistors. New results are included at 0.001 and 0.002 rad(Si)/s. Irradiations at elevated temperature at high dose rate are compared with room temperature irradiation at very low dose rate. Possible mechanisms for enhanced damage are discussed.
引用
收藏
页码：3049 / 3059
页数：11
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