A CMOS-MEMS Thermopile with an Integrated Temperature Sensing Diode for Mid-IR Thermometry

被引：13

作者：

Hopper, R. ^{[1
]}

Ali, S. ^{[1
]}

Chowdhury, M. ^{[1
]}

Boual, S. ^{[1
]}

De Luca, A. ^{[2
]}

Gardner, J. W. ^{[1
,3
]}

Udrea, F. ^{[1
,2
]}

机构：

[1] Cambridge CMOS Sensors, Deanland House,Cowley Rd, Cambridge CB4 0DL, England

[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

28TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS (EUROSENSORS 2014) | 2014年 / 87卷

关键词：

Thermopile; mid-infrared; detectors; cmos; thermometry;

D O I：

10.1016/j.proeng.2014.11.363

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we describe an infrared thermopile sensor comprising of single crystal silicon p+ and n+ elements, with an integrated diode temperature sensor fabricated using a commercial SOI-CMOS process followed by Deep Reactive Ion Etching (DRIE). The chip area is 1.16 mm x 1.06 mm. The integrated diode, being on the same substrate, allows a more localized measurement of the cold junction temperature compared to a conventional external thermistor. The use of single crystal silicon allows good process control and reproducibility from device-to-device in terms of both Seebeck coefficient and sensor resistance. The device has a measured responsivity of 23 V/W, detectivity of 0.75 x 10(8) cmv Hz/W, a 50 % modulation depth of 60 Hz and shows enhanced responsivity in the 8 -14 mu m wavelength range, making it particularly suitable for thermometry applications. (C) 2014 Published by Elsevier Ltd.

引用

页码：1127 / 1130

页数：4