Optimization of Field Emission Properties of Gated CuO Nanowire Field Emitter Arrays for Field Emission Display Application

被引：0
|
作者：
Chen, Yuxiang [1 ]
Lin, Xiuyao [1 ]
Liu, Gengxing [1 ]
Chen, Jun [1 ]
Deng, Shaozhi [1 ]
Xu, Ningsheng [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011 | 2011年
关键词：
planar gate; field emission display; cupric oxide;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The field emission properties of a planar-gated cupric oxide (CuO) nanowire field emitters arrays for emission display (FED) application have been optimized. To protect the cathode electrode from oxidation, Al thin film is introduced on the Cr electrode. Furthermore, a selective wet etching process to remove the Al layer is used before the cathode preparation in order to improve the back-contact of CuO nanowire field emitters. The results show that the field emission properties including uniformity and maximum current of the CuO nanowires in the gated device structure were dramatically improved.
引用
收藏
页码：690 / 692
页数：3
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