Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

被引：4

作者：

Chang, H. W. ^{[1
,2
,3
]}

Akita, S. ^{[3
]}

Matsukura, F. ^{[4
,5
]}

Ohno, H. ^{[3
,4
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Tohoku Univ, Lab Nanoelect & Spintron, Aoba Ku, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[5] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷

关键词：

Molecular beam epitaxy; Antimonides; Magnetic materials; Semiconducting III-V materials; Field effect transistors; MAGNETOTRANSPORT PROPERTIES; SEMICONDUCTORS; FERROMAGNETISM; GA1-XMNXSB;

D O I：

10.1016/j.jcrysgro.2013.11.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn) Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：633 / 635

页数：3

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