Progress in High Voltage SiC and GaN Power Switching Devices

被引：22

作者：

Chow, T. Paul ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; 2H-GaN; power rectifiers; power transistors; BIPOLAR-JUNCTION-TRANSISTORS; SEMICONDUCTORS; PERFORMANCE;

D O I：

10.4028/www.scientific.net/MSF.778-780.1077

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The present status of the development and commercialization of SiC and GaN power devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.

引用

页码：1077 / 1082

页数：6

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