Combined Raman scattering/photoluminescence analysis of Cu(In,Ga)Se2 electrodeposited layers

被引：18

作者：

Insignares-Cuello, C. ^{[1
]}

Izquierdo-Roca, V. ^{[1
]}

Lopez-Garcia, J. ^{[1
]}

Calvo-Barrio, L. ^{[2
]}

Saucedo, E. ^{[1
]}

Kretzschmar, S. ^{[3
]}

Unold, T. ^{[3
]}

Broussillou, C. ^{[4
]}

Goislard de Monsabert, T. ^{[4
]}

Bermudez, V. ^{[4
]}

Perez-Rodriguez, A. ^{[1
,5
]}

机构：

[1] Catalonia Inst Energy Res, IREC, Sant Adria Del Besos 08930, Barcelona, Spain

[2] Univ Barcelona, Ctr Cient & Tecnol CCiTUB, E-08028 Barcelona, Spain

[3] Helmholtz Zentrum, D-14109 Berlin, Germany

[4] NEXCIS Photovolta Technol, F-13790 Rousset, France

[5] Univ Barcelona, Dept Elect, IN2UB, E-08028 Barcelona, Spain

来源：

SOLAR ENERGY | 2014年 / 103卷

关键词：

Cu(In; Ga)Se-2; Thin film cells; Photoluminescence; Confocal microscopy; Raman scattering; Process monitoring; SIMULATION;

D O I：

10.1016/j.solener.2014.02.005

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work reports the optical non-destructive assessment of the relative Ga content in Cu(In,Ga)Se-2 absorbers synthesized from electrodeposited precursors using combined photoluminescence (PL) and Raman scattering. Comparison of the PL measurements with the Auger Spectroscopy characterization of the layers has allowed performing a calibration of the dependence of the PL peak energy on the absorber composition. This opens the possibility for the nondestructive chemical assessment of the absorbers synthesized with these low cost processes. Extension of these measurements using a confocal microscope demonstrates their viability for the nondestructive quantitative chemical profiling of the layers. Correlation of these data with Raman spectra measured with the same experimental setup allows deepening in the interpretation of the spectra, giving additional information related to the microcrystalline quality of the layers and the presence of secondary phases. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：89 / 95

页数：7

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