Stimulated emission from ZnO-SiO2-Si thin film nanoresonators obtained by magnetron sputtering method

被引：28

作者：

Gruzintsev, A ^{[1
]}

Volkov, V

Barthou, C

Benalloul, R

Frigerio, JM

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[2] Univ Paris 06, Lab Opt Solides, UMR 7601, CNRS, F-75252 Paris 05, France

来源：

THIN SOLID FILMS | 2004年 / 459卷 / 1-2期

关键词：

ZnO; thin films; nanoresonators; magnetron sputtering;

D O I：

10.1016/j.tsf.2003.12.108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on silicon oxide were carried out. The stimulated emission pumped under ultraviolet 337 nm N-2 laser excitation was observed at 397 nm at room temperature from ZnO-SiO2-Si type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm(2). (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：262 / 266

页数：5

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