Studies on Lead Sulphide Thin Films Deposited by Photochemical Method

被引：0

作者：

Shyju, T. S. ^{[1
,2
]}

Gopaiakrishnan, R. ^{[2
]}

机构：

[1] Sathyabama Univ, Ctr Nanosci & Nanotechnol, Madras 600119, Tamil Nadu, India

[2] Anna Univ, Dept Phys, Crystal Res Lab, Madras 600025, Tamil Nadu, India

来源：

2013 INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND EMERGING ENGINEERING TECHNOLOGIES (ICANMEET) | 2013年

关键词：

X-ray diffraction; Growth from solutions; Semiconducting lead sulphide; Photochemical method; CHEMICAL BATH DEPOSITION; SOLAR-CELLS; PBS; GROWTH; LAYER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanocrystalline lead sulphide (PbS) thin films were deposited on glass and ITO coated glass substrates by photochemical method. To improve the adhesive nature and properties the films were deposited on ITO coated substrate using photochemical deposition. The deposited films were characterized to study their structural, morphological and electrical properties. The photochemically deposited PbS thin films possess tetragonal system. The dislocation densities of the deposited thin films were evaluated from the X-ray diffraction data. High Resolution Scanning Electron Micrographs of the deposited film shows the oval shape arrangement of particles. The elemental composition of the film was confirmed by Energy Dispersive X-ray analysis. Hall measurements were carried out for the films and their electrical parameters were evaluated. The as-deposited PbS films have positive Hall coefficient, which confirms p-type conductivity.

引用

页码：340 / 343

页数：4

共 23 条

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