A recent scanning tunneling microscopy (STM) experiment has revealed that C-60-C-70 mixture on the Cu(111)-(1 x 1) substrate shows specific bias-voltage-dependent images which reflect intramolecular structure. In order to understand this observation, we perform a band-structure calculation. In this study, we adopt a simple model assuming a two-dimensional (2D) molecular crystal and a proper adsorption geometry. By comparing the calculated charge distributions of the lowest unoccupied molecular orbital (LUMO)-induced bands and the highest occupied molecular orbital (HOMO)-induced bands with the observed STM images, we find that the shapes of the intramolecular structures which change with the bias voltage strongly reflect the positions of pentagonal and hexagonal rings.
机构:
Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Wang, Peng
Meng, Liang
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Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Meng, Liang
Wang, Xiao-Bo
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Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Wang, Xiao-Bo
Li, Yan-Jun
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Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Li, Yan-Jun
Sheng, Chun-Qi
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Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Sheng, Chun-Qi
Wang, Jia-Ou
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Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Wang, Jia-Ou
Qian, Hai-Jie
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Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Qian, Hai-Jie
Ibrahim, Kurash
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Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
Ibrahim, Kurash
Li, Hong-Nian
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Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
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City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
Win, Zaw-Myo
Huang, Chao
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City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
Huang, Chao
Zhang, Rui-Qin
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City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
Zhang, Rui-Qin
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS,
2017,
864