Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure

被引：15

作者：

Sui, Y. R. ^{[1
,2
]}

Xu, Y. ^{[3
]}

Yao, B. ^{[1
]}

Xiao, L. ^{[2
]}

Liu, B. ^{[1
]}

机构：

[1] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China

[2] Jilin Normal Univ, Dept Phys, Siping 136000, Peoples R China

[3] Jilin Univ, Test Sci Expt Ctr, Changchun 130021, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 12期

基金：

中国国家自然科学基金;

关键词：

rf magnetron sputtering; c-Zr3N4; film; Crystal structure; Characterization and properties; NITRIDE FILMS; ZIRCONIUM NITRIDES; DEPOSITION; GROWTH;

D O I：

10.1016/j.apsusc.2009.02.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A N-rich Zr-N film with Th3P4 structure (denoted as c-Zr3N4) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N-2 as sputtering gas. The crystal structure and composition of the c-Zr3N4 was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr3N4 was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr3N4 compound is a p-type semiconductor with resistivity of 2.121 x 10(4) V cm, carrier concentration of 9 x 10(14) cm (3) and Hall mobility of 0.34 cm(2)/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr3N4 compound was suggested in the present work. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6355 / 6358

页数：4

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