Intervalley scattering in hexagonal boron nitride

被引：72

作者：

Cassabois, G. ^{[1
]}

Valvin, P. ^{[1
]}

Gil, B. ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, L2C, UMR 5221, F-34095 Montpellier, France

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 03期

关键词：

SINGLE-CRYSTAL;

D O I：

10.1103/PhysRevB.93.035207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report photoluminescence experiments bringing the evidence for intervalley scattering in bulk hexagonal boron nitride. From a quantitative analysis of the defect-related emission band, we demonstrate that transverse optical phonons at the K point of the Brillouin zone assist inter-K valley scattering, which becomes observable because stacking faults in bulk hexagonal boron nitride provide a density of final electronic states. Time-resolved experiments highlight the different recombination dynamics of the phonon replicas implying either virtual excitonic states or real electronic states in the structural defects.

引用

页数：6

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