Poly (3-hexylthiophene) based field-effect transistors with gate SiO2 dielectric modified by multi-layers of 3-aminopropyltrimethoxysilane

被引：9

作者：

Saxena, Vibha ^{[1
]}

Chauhan, A. K. ^{[1
]}

Padma, N. ^{[1
]}

Aswal, D. K. ^{[1
]}

Koiry, S. P. ^{[1
]}

Sen, Shashwati ^{[1
]}

Tokas, R. B. ^{[2
]}

Gupta, S. K. ^{[1
]}

Suergers, C. ^{[3
,4
]}

Yakhmi, J. V. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

[2] Bhabha Atom Res Ctr, Div Spect, Bombay 400085, Maharashtra, India

[3] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany

[4] Univ Karlsruhe, Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 21期

关键词：

Organic field effect transistors; Poly (3-hexylthiophene); Self-assembled monolayers; THIN-FILM TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); EFFECT MOBILITY; ELECTRODES; CHAIN;

D O I：

10.1016/j.tsf.2009.05.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Top-contact organic field-effect transistors based on poly(3-hexylthiophene) (P3HT) active layer were fabricated using gate dielectric (SiO2) modified with 3-amino propyltrimethoxysilane (APTMS) multilayers. It has been demonstrated that the treatment of dielectric with APTMS enhances the field-effect mobility as well as the on/off ratio of the devices by nearly two orders of magnitude. This is attributed to conformational changes as well as to an improved uniformity of the spin coat P3HT films on the APTMS-modified substrate as revealed by atomic force microscopy, Fourier transform infrared spectroscopy and UV-Vis measurements. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6124 / 6128

页数：5

共 31 条

[1]

[Anonymous], 2002, SEMICONDUCTOR DEVICE

[2] All jet-printed polymer thin-film transistor active-matrix backplanes [J].

Arias, AC ;

Ready, SE ;

Lujan, R ;

Wong, WS ;

Paul, KE ;

Salleo, A ;

Chabinyc, ML ;

Apte, R ;

Street, RA ;

Wu, Y ;

Liu, P ;

Ong, B .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3304-3306

[3] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].

Bao, Z ;

Dodabalapur, A ;

Lovinger, AJ .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4108-4110

[4] Effect of interchain interactions on the absorption and emission of poly(3-hexylthiophene) -: art. no. 064203 [J].

Brown, PJ ;

Thomas, DS ;

Köhler, A ;

Wilson, JS ;

Kim, JS ;

Ramsdale, CM ;

Sirringhaus, H ;

Friend, RH .

PHYSICAL REVIEW B, 2003, 67 (06)

[5] Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics [J].

Chauhan, A. K. ;

Aswal, D. K. ;

Koiry, S. P. ;

Gupta, S. K. ;

Yakhmi, J. V. ;

Suergers, C. ;

Guerin, D. ;

Lenfant, S. ;

Vuillaume, D. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 90 (03) :581-589

[6] VIBRATIONAL KEY BANDS AND ELECTRICAL-CONDUCTIVITY OF POLYTHIOPHENE [J].

FURUKAWA, Y ;

AKIMOTO, M ;

HARADA, I .

SYNTHETIC METALS, 1987, 18 (1-3) :151-156

[7]

GUNDLACH DJ, 2007, NAT MATER, V6, P4

[8] Measuring molecular order in poly(3-alkylthiophene) thin films with polarizing spectroscopies [J].

Gurau, Marc C. ;

Delongchamp, Dean M. ;

Vogel, Brandon M. ;

Lin, Eric K. ;

Fischer, Daniel A. ;

Sambasivan, Sharadha ;

Richter, Lee J. .

LANGMUIR, 2007, 23 (02) :834-842

[9] Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9, 10-tetracarboxylic diimide [J].

Hosoi, Yoshinobu ;

Tsunami, Daisuke ;

Ishii, Hisao ;

Furukawa, Yukio .

CHEMICAL PHYSICS LETTERS, 2007, 436 (1-3) :139-143

[10] The application of soluble and regioregular poly(3-hexylthiophene) for organic thin-film transistors [J].

Joung, MJ ;

Kim, CA ;

Kang, SY ;

Baek, KH ;

Kim, GH ;

Ahn, SD ;

You, IK ;

Ahn, JH ;

Suh, KS .

SYNTHETIC METALS, 2005, 149 (01) :73-77

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